high speed infrared emitting diode, rohs compliant, 890 nm, gaalas double hetero www.vishay.com for technical questions, contact: emittertechsupport@vishay.com document number: 81061 224 rev. 1.7, 04-sep-08 tsmf1000, tsmf1020, tsmf1030 vishay semiconductors description tsmf1000 series are infrared, 890 nm emitting diodes in gaalas double hetero (dh) technology with high radiant power and high speed, molded in clear, untinted plastic packages (with lens) for surface mounting (smd). features ? package type: surface mount ? package form: gw, rgw, yoke, axial ? dimensions (l x w x h in mm): 2.5 x 2 x 2.7 ? peak wavelength: p = 890 nm ? high radiant power ? angle of half intensity: ? = 17 ? low forward voltage ? suitable for high pulse current operation ? versatile terminal configurations ? package matches with detector temd1000 ? floor life: 168 h, msl 3, acc. j-std-020 ? lead (pb)-free component in accordance with rohs 2002/95/ec and weee 2002/96/ec applications ? irda compatible data transmission ? miniature light barrier ? photointerrupters ? optical switch ? control and drive circuits ? shaft encoders note test conditions see tabl e ?basic char acteristics? note moq: minimum order quantity 1675 8 -5 tsmf1000 tsmf1030 tsmf1020 product summary component i e (mw/sr) ? (deg) p (nm) t r (ns) tsmf1000 5 17 890 30 tsmf1020 5 17 890 30 tsmf1030 5 17 890 30 ordering information ordering code packaging remarks package form tsmf1000 tape and reel moq: 1000 pcs, 1000 pcs/reel reverse gullwing tsmf1020 tape and reel moq: 1000 pcs, 1000 pcs/reel gullwing tsmf1030 tape and reel moq: 1000 pcs, 1000 pcs/reel yoke absolute maximum ratings parameter test condition symbol value unit reverse voltage v r 5v forward current i f 100 ma peak forward current t p /t = 0.5, t p = 100 s i fm 200 ma surge forward current t p = 100 s i fsm 0.8 a power dissipation p v 180 mw
document number: 81061 for technical questi ons, contact: emittertechsupport@vishay.com www.vishay.com rev. 1.7, 04-sep-08 225 tsmf1000, tsmf1020, tsmf1030 high speed infrared emitting diode, rohs compliant, 890 nm, gaalas double hetero vishay semiconductors note t amb = 25 c, unless otherwise specified fig. 1 - power dissipation limit vs. ambient temperature fig. 2 - forward cu rrent limit vs. ambient temperature note t amb = 25 c, unless otherwise specified junction temperature t j 100 c operating temperature range t amb - 40 to + 85 c storage temperature range t stg - 40 to + 100 c soldering temperature t 5 s t sd 260 c thermal resistance junction/ambient soldered on pcb, pad dimensions: 4 mm x 4 mm r thja 400 k/w absolute maximum ratings parameter test condition symbol value unit 0 20 40 60 8 0 100 120 140 160 1 8 0 200 010203040506070 8 0 90 100 21165 t am b - am b ient temperat u re (c) p v - po w er dissipation (m w ) r thja = 400 k/ w 0 20 40 60 8 0 100 120 0 10 203040 506070 8 0 90 100 t am b - am b ient temperat u re (c) 21166 i f - for w ard c u rrent (ma) r thja = 400 k/ w basic characteristics parameter test condition symbol min. typ. max. unit forward voltage i f = 20 ma v f 1.3 1.5 v i f = 1 a, t p = 100 s v f 2.4 v temperature coefficient of v f i f = 1 ma tk vf - 1.8 mv/k reverse current v r = 5 v i r 10 a junction capacitance v r = 0 v, f = 1 mhz, e = 0 c j 160 pf radiant intensity i f = 20 ma i e 2.5 5 13 mw/sr i f = 100 ma, t p = 100 s i e 25 mw/sr radiant power i f = 100 ma, t p = 20 ms e 35 mw temperature coefficient of e i f = 20 ma tk e - 0.6 %/k angle of half intensity ? 17 deg peak wavelength i f = 20 ma p 890 nm spectral bandwidth i f = 20 ma ? 40 nm temperature coefficient of p i f = 20 ma tk p 0.2 nm/k rise time i f = 20 ma t r 30 ns fall time i f = 20 ma t f 30 ns cut-off frequency i dc = 70 ma, i ac = 30 ma pp f c 12 mhz virtual source diameter d 1.2 mm
www.vishay.com for technical questions, contact: emittertechsupport@vishay.com document number: 81061 226 rev. 1.7, 04-sep-08 tsmf1000, tsmf1020, tsmf1030 vishay semiconductors high speed infrared emitting diode, rohs compliant, 890 nm, gaalas double hetero basic characteristics t amb = 25 c, unless otherwise specified fig. 3 - pulse forward current vs. pulse duration fig. 4 - forward current vs. forward voltage fig. 5 - radiant intensity vs. forward current fig. 6 - radiant power vs. forward current fig. 7 - rel. radiant intensit y/power vs. ambient temperature fig. 8 - relative radiant power vs. wavelength 0.01 0.1 1 10 1 10 100 1000 10 000 t p - p u lse length (ms) 100 95 99 8 5 i - for w ard c u rrent (ma) f dc t p /t = 0.005 0.5 0.2 0.1 0.01 0.05 0.02 t am b < 60 c v f - for w ard v oltage ( v ) 94 888 0 10 1 10 0 10 2 10 3 10 4 i f - for w ard c u rrent (ma) 4 3 2 1 0 161 8 9 10 3 10 1 10 2 10 4 10 0 0.1 1 10 1000 100 i f - for w ard c u rrent (ma) i e - radiant intensity (m w /sr) - radiant po w er (m w ) e i f - for w ard c u rrent (ma) 94 8 007 10 3 10 1 10 2 10 4 10 0 0.1 1 10 1000 100 - 10 10 50 0 100 0 0.4 0. 8 1.2 1.6 i e rel ; 140 94 7993 i f = 20 ma e rel t am b - am b ient temperat u re (c) 8 00 900 - w a v elength (nm) 1000 200 8 2 0 0.25 0.5 0.75 1.0 1.25 e rel - relati v e radiant po w er
document number: 81061 for technical questi ons, contact: emittertechsupport@vishay.com www.vishay.com rev. 1.7, 04-sep-08 227 tsmf1000, tsmf1020, tsmf1030 high speed infrared emitting diode, rohs compliant, 890 nm, gaalas double hetero vishay semiconductors fig. 9 - relative radiant int ensity vs. angular displacement precautions for use 1. over-current-proof customer must apply resist ors for protection, otherwise slight voltage shift will cause big current change (burn out will happen). 2. storage 2.1 storage temperature and re l. humidity conditions are: 5 c to 35 c, r.h. 60 %. 2.2 floor life must not exceed 168 h, acc. to jedec level 3, j-std-020. once the package is opened, the products should be used within a week. otherwise, they should be kept in a damp proof box with desiccant. considering tape life, we suggest to use products within one year from production date. 2.3 if opened more than one week in an atmosphere 5 c to 35 c, r.h. 60 %, devices should be treated at 60 c 5 c for 15 h. 2.4 if humidity indicator in the package shows pink color (normal blue), then devices should be treated with the same conditions as 2.3. reflow solder profile fig. 10 - lead tin (snpb) reflow solder profile s rel - relati v e sensiti v ity 94 8 24 8 0.6 0.9 0. 8 0 30 10 20 40 50 60 70 8 0 0.7 1.0 0 0.2 0.4 ? - ang u lar displacement 60 8 0 100 120 140 160 1 8 0 200 220 240 260 0204060 8 0 100 120 140 160 1 8 0 200 220 time (s) temperat u re (c) 17172 + 5 c/s 5 s 60 s to 120 s - 5 c/s
www.vishay.com for technical questions, contact: emittertechsupport@vishay.com document number: 81061 228 rev. 1.7, 04-sep-08 tsmf1000, tsmf1020, tsmf1030 vishay semiconductors high speed infrared emitting diode, rohs compliant, 890 nm, gaalas double hetero package dimensions in millimeters: tsmf1000 package dimensions in millimeters: tsmf1020 16159 16160 3. 8 0.2 ? 1.9 0.2 0.3 0.15 0.05 0.75 1.4 2.7 0.2 0. 8 5 2.5 0.2 1.1 2 0.2 0.5 0.4 ca 4.5 0.1 2.3 0.1 1 0.1
document number: 81061 for technical questi ons, contact: emittertechsupport@vishay.com www.vishay.com rev. 1.7, 04-sep-08 229 tsmf1000, tsmf1020, tsmf1030 high speed infrared emitting diode, rohs compliant, 890 nm, gaalas double hetero vishay semiconductors package dimensions in millimeters: tsmf1030 reel dimensions in millimeters 1622 8 iss u e: 3; 11.06.0 8 dra w ing- n o.: 9. 8 00-50 8 0.01-4 leader and trailer tape: parts mo u nted empty trailer (200 mm, min.) empty leader (400 mm, min.) direction of p u lling o u t unreel direction 60.2 0.5 17 8 1 2 . 5 0.5 la b el posted here coming o u t from reel tape position x x 13 0.5 13.2 1.5 16 0.2 1 8 033
www.vishay.com for technical questions, contact: emittertechsupport@vishay.com document number: 81061 230 rev. 1.7, 04-sep-08 tsmf1000, tsmf1020, tsmf1030 vishay semiconductors high speed infrared emitting diode, rohs compliant, 890 nm, gaalas double hetero taping dimensions in millimeters: tsmf1000 taping dimensions in millimeters: tsmf1020 1 8 030 3.05 0.1 0.3 ? 1.55 0.05 4 0.1 2 0.05 4 0.1 1.75 0.1 5.5 0.05 12 0.3 top tape p u sh pin thro u gh hole q u antity per reel: 1000 pcs or 5000 pcs feed direction anode 1 8 031 3.05 0.1 0.3 ? 1.55 0.05 4 0.1 2 0.05 4 0.1 1.75 0.1 5.5 0.05 12 0.3 top tape p u sh pin thro u gh hole q u antity per reel: 1000 pcs or 5000 pcs feed direction anode
document number: 81061 for technical questi ons, contact: emittertechsupport@vishay.com www.vishay.com rev. 1.7, 04-sep-08 231 tsmf1000, tsmf1020, tsmf1030 high speed infrared emitting diode, rohs compliant, 890 nm, gaalas double hetero vishay semiconductors taping dimensions in millimeters: tsmf1030 1 8 032 3.05 0.1 0.3 ? 1.55 0.05 4 0.1 2 0.05 4 0.1 1.75 0.1 5.5 0.05 12 0.3 top tape p u sh pin thro u gh hole q u antity per reel: 1000 pcs or 5000 pcs feed direction anode
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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